Two-dimensional defect mapping of the SiO2/4H-SiC interface

Woerle, Judith and Johnson, Brett C. and Bongiorno, Corrado and Yamasue, Kohei and Ferro, Gabriel and Dutta, Dipanwita and Jung, Thomas A. and Sigg, Hans and Cho, Yasuo and Grossner, Ulrike and Camarda, Massimo. (2019) Two-dimensional defect mapping of the SiO2/4H-SiC interface. Physical Review Materials , 3 (8). 084602.

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Official URL: https://edoc.unibas.ch/75416/

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Current generations of 4H-SiC metal-oxide-semiconductor field-effect transistors are still challenged by the high number of defects at the SiO2/SiC interface that limit both the performance and gate reliability of these devices. One potential source of the high density of interface defect states (D-it) is the stepped morphology on commonly used off-axially grown epitaxial surfaces, favoring incomplete oxidation and the formation of defective transition layers. Here we report measurements on intentionally modified 4H-SiC surfaces exhibiting both atomically flat and stepped regions where the generation of interface defects can be directly linked to differences in surface roughness. By combining spatially resolving structural, chemical, optical, and electrical analysis techniques, a strong increase of D-it for stepped surfaces was revealed while regions with an atomically flat SiC surface exhibited close-to-ideal interface properties.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik
UniBasel Contributors:Jung, Thomas A. and Dutta, Dipanwita
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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edoc DOI:
Last Modified:04 May 2023 06:57
Deposited On:30 Mar 2020 12:24

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