Spectroscopic characterization and photoactivity of SiOx-based films electrochemically grown on Cu surfaces

Krywko-Cendrowska, Agata and Marot, Laurent and Philippe, Laetitia and Strawski, Marcin and Meyer, Ernst and Szklarczyk, Marek. (2017) Spectroscopic characterization and photoactivity of SiOx-based films electrochemically grown on Cu surfaces. Journal of Applied Electrochemistry, 47 (8). pp. 917-930.

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Electrodeposited SiOx electrodes were shown to be photoactive and exhibit n- and p-type effects for electrodes placed in aqueous and organic solutions, respectively. As seen by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron (XPS) spectroscopy, the mechanism of the electrodeposition included reactions with the used electrolyte as well as with traces of water as sources of oxygen and hydrogen. The lowest band gap energy (E-g) of the films of approximately 1.6 eV was observed for the film electrodeposited at -2.5 V in comparison to 1.9 eV for the films obtained at -2.25 and -2.75 V. The depth profiles of Si and O in the films were registered by XPS, secondary ion mass spectrometry (SIMS), and glow discharge optical emission spectroscopy (GD-OES), which showed that Si and O were relatively uniformly distributed across the entire layer of the film. The n-type photoactivity was associated with the evolution of oxygen from the aqueous solution, and the p-type was attributed to the reductive deterioration of the amorphous SiOx deposit and simultaneous photodecomposition of the electrolyte.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Meyer, Ernst
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:Springer Verlag
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:15 Jan 2018 12:16
Deposited On:15 Jan 2018 12:16

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