Charge Noise in Organic Electrochemical Transistors

Stoop, Ralph L. and Thodkar, Kishan and Sessolo, Michele and Bolink, Henk J. and Schönenberger, Christian and Calame, Michel. (2017) Charge Noise in Organic Electrochemical Transistors. Physical Review Applied, 7 (1). 014009.

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Official URL: http://edoc.unibas.ch/58125/

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Organic electrochemical transistors (OECTs) are increasingly studied as transducers in sensing applications. While much emphasis has been placed on analyzing and maximizing the OECT signal, noise has been mostly ignored, although it determines the resolution of the sensor. The major contribution to the noise in sensing devices is the 1/f noise, dominant at low frequency. In this work, we demonstrate that the 1/f noise in OECTs follows a charge-noise model, which reveals that the noise is due to charge fuctuations in proximity or within the bulk of the channel material. We present the noise scaling behavior with gate voltage, channel dimensions and polymer thickness. Our results suggest the use of large area channels in order to maximize the signal-to-noise-ratio (SNR) for biochemical and electrostatic sensing applications. Comparison with literature shows that the magnitude of the noise in OECTs is similar to that observed in graphene transistors, and only slightly higher compared to Carbon nanotubes and Silicon nanowire devices. In a model ion-sensing experiment with OECTs, we estimate crucial parameters such as the characteristic SNR and corresponding limit of detection.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Stoop, Ralph and Thodkar, Kishan and Calame, Michel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:15 Jan 2018 10:34
Deposited On:28 Dec 2017 09:43

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