Rossmann, H. R. and Gysin, U. and Bubendorf, A. and Glatzel, T. and Reshanov, S. A. and Zhang, A. and Schoner, A. and Jung, T. A. and Meyer, E. and Bartolf, H.. (2016) Junction Barrier Schottky (JBS) Rectifier Interface Engineering Facilitated by Two-Dimensional (2D) Dopant Imaging. Materials Science Forum, 858. pp. 497-500.
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Official URL: http://edoc.unibas.ch/54024/
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Abstract
The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Microscopy (SPM) and Secondary Electron Potential Contrast (SEPC) measurements on the cross-section of the device. We have demonstrated that these techniques succeeded in mapping the two-dimensional carrier distribution inside the active area of the device, however with different resolution and quantification possibilities.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer) |
|---|---|
| UniBasel Contributors: | Glatzel, Thilo and Jung, Thomas A. and Meyer, Ernst |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | Trans Tech Publications |
| ISSN: | 0255-5476 |
| e-ISSN: | 1662-9752 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
| Identification Number: | |
| Last Modified: | 22 Feb 2017 14:01 |
| Deposited On: | 22 Feb 2017 14:01 |
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