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Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires

Tedeschi, Davide and De Luca, Marta and Granados del Aguila, Andres and Gao, Qian and Ambrosio, Gina and Capizzi, Mario and Tan, Hoe H. and Christianen, Peter C. M. and Jagadish, Chennupati and Polimeni, Antonio. (2016) Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires. Nano Letters, 16 (10). pp. 6213-6221.

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Official URL: http://edoc.unibas.ch/53925/

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Abstract

The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III–V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field ( B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is m e ∥ = (0.078 ± 0.002) m 0 ( m 0 is the electron mass in vacuum) and perpendicular to ĉ is m e ⊥ = (0.093 ± 0.001) m 0 , resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to m h ∥ = (0.81 ± 0.18) m 0 and m h ⊥ = (0.250 ± 0.016) m 0 , respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Material Physics (Zardo)
UniBasel Contributors:De Luca, Marta
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Chemical Society
ISSN:1530-6984
e-ISSN:1530-6992
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:20 Feb 2017 15:34
Deposited On:20 Feb 2017 15:34

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