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Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits

Malkoc, O. and Stano, P. and Loss, D.. (2016) Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits. Physical Review B, 93 (23). p. 5413.

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Abstract

We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:2469-9950
e-ISSN:2469-9969
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
Identification Number:
Last Modified:10 May 2017 10:49
Deposited On:15 Feb 2017 14:59

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