edoc

Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions

Tóvári, Endre and Makk, Péter and Liu, Ming-Hao and Rickhaus, Peter and Kovács-Krausz, Zoltán and Richter, Klaus and Schönenberger, Christian and Csonka, Szabolcs. (2016) Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions. Nanoscale, 8 (47). pp. 19910-19916.

[img]
Preview
PDF - Published Version
Available under License CC BY (Attribution).

2305Kb

Official URL: http://edoc.unibas.ch/52361/

Downloads: Statistics Overview

Abstract

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to the new conducting channels formed in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Rickhaus, Peter and Makk, Peter and Csonka, Szabolcs
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:RSC Publishing
ISSN:2040-3364
e-ISSN:2040-3372
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
Identification Number:
Last Modified:15 Feb 2017 10:06
Deposited On:15 Feb 2017 10:02

Repository Staff Only: item control page