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Spin transport in fully hexagonal boron nitride encapsulated graphene

Gurram, M. and Omar, S. and Zihlmann, S. and Makk, P. and Schoenenberger, C. and van Wees, B. J.. (2016) Spin transport in fully hexagonal boron nitride encapsulated graphene. Physical Review B, 93 (11). p. 115441.

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Official URL: http://edoc.unibas.ch/52349/

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Abstract

We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5-mu m-long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Makk, Peter and Zihlmann, Simon
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:2469-9950
e-ISSN:2469-9969
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
Identification Number:
Last Modified:10 May 2017 10:56
Deposited On:15 Feb 2017 08:40

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