Electrical spin protection and manipulation via gate-locked spin-orbit fields

Dettwiler, F. and Fu, J. and Mack, S. and Weigele, P. J. and Egues, J. C. and Awschalom, D. D. and Zumbuhl, D. M.. (2014) Electrical spin protection and manipulation via gate-locked spin-orbit fields. arxiv.org [cond-mat.mes-hall].

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Official URL: http://edoc.unibas.ch/42932/

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The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic eld. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benet if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation.Here, we demonstrate broad, independent control of all relevant SO elds in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO elds while keeping both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Quantenphysik (Zumbühl)
UniBasel Contributors:Zumbühl, Dominik M
Item Type:Article, refereed
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:30 Jun 2016 11:04
Deposited On:23 May 2016 09:16

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