Hexagonal Silicon Realized

Hauge, Håkon Ikaros T. and Verheijen, Marcel A. and Conesa-Boj, Sonia and Etzelstorfer, Tanja and Watzinger, Marc and Kriegner, Dominik and Zardo, Ilaria and Fasolato, Claudia and Capitani, Francesco and Postorino, Paolo and Kölling, Sebastian and Li, Ang and Assali, Simone and Stangl, Julian and Bakkers, Erik P. A. M.. (2015) Hexagonal Silicon Realized. Nano Letters, 15 (9). pp. 5855-5860.

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Official URL: http://edoc.unibas.ch/41005/

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Silicon, arguably the most important technological semiconductor, is predicted to exhibit a range of new and interesting properties when grown in the hexagonal crystal structure. To obtain pure hexagonal silicon is a great challenge because it naturally crystallizes in the cubic structure. Here, we demonstrate the fabrication of pure and stable hexagonal silicon evidenced by structural characterization. In our approach, we transfer the hexagonal crystal structure from a template hexagonal gallium phosphide nanowire to an epitaxially grown silicon shell, such that hexagonal silicon is formed. The typical ABABAB... stacking of the hexagonal structure is shown by aberration-corrected imaging in transmission electron microscopy. In addition, X-ray diffraction measurements show the high crystalline purity of the material. We show that this material is stable up to 9 GPa pressure. With this development, we open the way for exploring its optical, electrical, superconducting, and mechanical properties.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Material Physics (Zardo)
UniBasel Contributors:Zardo, Ilaria
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Chemical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:13 Oct 2017 07:35
Deposited On:12 May 2016 06:34

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