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An artificial Rb atom in a semiconductor with lifetime-limited linewidth

Jahn, Jan-Philipp and Munsch, Mathieu and Béguin, Lucas and Kuhlmann, Andreas V. and Renggli, Martina and Huo, Yongheng and Ding, Fei and Trotta, Rinaldo and Reindl, Marcus and Schmidt, Oliver G. and Rastelli, Armando and Treutlein, Philipp and Warburton, Richard J.. (2015) An artificial Rb atom in a semiconductor with lifetime-limited linewidth. Physical Review B, 92 (24). p. 245439.

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Official URL: http://edoc.unibas.ch/40717/

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Abstract

We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency-matched to the Rb D2-transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.48 GHz) with both resonant and non-resonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible upper state dephasing of the QD transition. We therefore establish a close-to-ideal solid-state source of single photons at a key wavelength for quantum technologies.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
05 Faculty of Science > Departement Physik > Physik > Experimentelle Nanophysik (Treutlein)
UniBasel Contributors:Treutlein, Philipp and Jahn, Jan-Philipp and Munsch, Mathieu and Beguin, Lucas and Kuhlmann, Andreas and Warburton, Richard J
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
ISSN:2469-9950
e-ISSN:2469-9969
Note:Publication type according to Uni Basel Research Database: Journal article
Language:English
Identification Number:
Last Modified:05 Apr 2018 11:39
Deposited On:10 May 2016 13:48

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