GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

Maradan, D. and Casparis, L. and Liu, T. -M. and Biesinger, D. E. F. and Scheller, C. P. and Zumbühl, D. M. and Zimmerman, J. and Gossard, A. C.. (2014) GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing. Journal of low temperature physics, Vol. 175, H. 5-6. pp. 784-798.

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Official URL: http://edoc.unibas.ch/dok/A6223315

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We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Quantenphysik (Zumbühl)
UniBasel Contributors:Zumbühl, Dominik M
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:Plenum Press
Note:Publication type according to Uni Basel Research Database: Journal article
Last Modified:05 Jun 2015 08:52
Deposited On:05 Jun 2015 08:52

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