Strongly interacting holes in Ge/Si nanowires

Maier, Franziska and Meng, Tobias and Loss, Daniel. (2014) Strongly interacting holes in Ge/Si nanowires. Physical Review B, 90 (15). p. 155437.

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Official URL: http://edoc.unibas.ch/dok/A6348182

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We consider holes confined to Ge/Si core/shell nanowires subject to strong Rashba spin-orbit interaction and screened Coulomb interaction. Such wires can, for instance, serve as host systems for Majorana bound states. Starting from a microscopic model, we find that the Coulomb interaction strongly influences the properties of experimentally realistic wires. To show this, a Luttinger liquid description is derived based on a renormalization group analysis. This description in turn allows us to calculate the scaling exponents of various correlation functions as a function of the microscopic system parameters. It furthermore permits us to investigate the effect of Coulomb interaction on a small magnetic field, which opens a strongly anisotropic partial gap.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Physical Society
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:10 May 2017 11:20
Deposited On:10 Apr 2015 09:12

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