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Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications

Fu, W. and El Abbassi, M. and Hasler, T. and Jung, M. and Steinacher, M. and Calame, M. and Schönenberger, C. and Puebla-Hellmann, G. and Hellmüller, S. and Ihn, T. and Wallraff, A.. (2014) Electrolyte gate dependent high-frequency measurement of graphene field-effect transistor for sensing applications. Applied physics letters, Vol. 104, H. 1 , 013102.

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Official URL: http://edoc.unibas.ch/dok/A6338956

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Abstract

We performed radiofrequency (RF) reflectometry measurements at 2–4 GHz on electrolyte-gated graphene field-effect transistors, utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced, even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependent gating in solution with nanosecond time resolution.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and El Abbassi, Maria and Hasler, Thomas and Jung, Minkyung and Steinacher, Michael StM and Calame, Michel and Puebla-Hellmann, Gabriel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Institute of Physics
ISSN:0003-6951
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:06 Feb 2015 09:59
Deposited On:06 Feb 2015 09:59

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