Charge noise and spin noise in a semiconductor quantum device

Kuhlmann, Andreas V. and Houel, Julien and Ludwig, Arne and Greuter, Lukas and Reuter, Dirk and Wieck, Andreas D. and Poggio, Martino and Warburton, Richard J.. (2013) Charge noise and spin noise in a semiconductor quantum device. Nature Physics, 9. pp. 570-575.

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Official URL: http://edoc.unibas.ch/dok/A6174408

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Improving the quantum coherence of solid-state systems that mimic two-level atoms, for instance spin qubits or single-photon emitters using semiconductor quantum dots, involves dealing with the noise inherent to the device. Charge noise results in a fluctuating electric field, spin noise in a fluctuating magnetic field at the location of the qubit, and both can lead to dephasing and decoherence of optical and spin states. We investigate noise in an ultrapure semiconductor device using a minimally invasive, ultrasensitive local probe: resonance fluorescence from a single quantum dot. We distinguish between charge noise and spin noise through a crucial difference in their optical signatures. Noise spectra for both electric and magnetic fields are derived from 0.1 Hz to 100 kHz. The charge noise dominates at low frequencies, spin noise at high frequencies. The noise falls rapidly with increasing frequency, allowing us to demonstrate transform-limited quantum-dot optical linewidths by operating the device above 50 kHz.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
05 Faculty of Science > Departement Physik > Physik > Nanotechnologie Argovia (Poggio)
UniBasel Contributors:Poggio, Martino and Warburton, Richard J and Kuhlmann, Andreas and Houel, Julien and Ludwig, Arne and Greuter, Lukas
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:Nature Publishing Group
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:03 Aug 2018 13:24
Deposited On:25 Oct 2013 08:33

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