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Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot

Houel, J. and Kuhlmann, A. V. and Greuter, L. and Xue, F. and Poggio, M. and Gerardot, B. D. and Dalgarno, P. A. and Badolato, A. and Petroff, P. M. and Ludwig, A. and Reuter, D. and Wieck, A. D. and Warburton, R. J.. (2012) Probing single-charge fluctuations at a GaAs/AlAs interface using laser spectroscopy on a nearby InGaAs quantum dot. Physical review letters, Vol. 108 , 107401.

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Official URL: http://edoc.unibas.ch/dok/A6070508

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Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimental Physics (Warburton)
UniBasel Contributors:Warburton, Richard J
Item Type:Article, refereed
Article Subtype:Research Article
Publisher:American Institute of Physics
ISSN:0031-9007
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:25 Mar 2020 14:15
Deposited On:01 Mar 2013 11:13

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