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Electric-dipole-induced spin resonance in disordered semiconductors

Duckheim, M. and Loss, D.. (2006) Electric-dipole-induced spin resonance in disordered semiconductors. Nature physics, Vol. 2, H. 3. pp. 195-199.

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Official URL: http://edoc.unibas.ch/dok/A5254642

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Abstract

One of the hallmarks of spintronics is the control of magnetic moments by electric fields enabled by strong spin-orbit interaction (SOI) in semiconductors. A powerful way of manipulating spins in such structures is electric-dipole-induced spin resonance (EDSR), where the radio-frequency fields driving the spins are electric, not magnetic as in standard paramagnetic resonance. Here, we present a theoretical study of EDSR for a two-dimensional electron gas in the presence of disorder, where random impurities not only determine the electric resistance but also the spin dynamics through SOL Considering a specific geometry with the electric and magnetic fields parallel and in-plane, we show that the magnetization develops an out-of-plane component at resonance that survives the presence of disorder. We also discuss the spin Hall current generated by EDSR. These results are derived in a diagrammatic approach, with the dominant effects coming from the spin vertex correction, and the optimal parameter regime for observation is identified.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:Nature
ISSN:1745-2473
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:22 Mar 2012 14:27
Deposited On:22 Mar 2012 13:58

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