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Contrast inversion in nc-AFM on Si(111)7 x 7 due to short-range electrostatic interactions

Guggisberg, M. and Pfeiffer, O. and Schaer, S. and Barwich, V. and Bammerlin, M. and Loppacher, C. and Bennewitz, R. and Baratoff, A. and Meyer, E.. (2001) Contrast inversion in nc-AFM on Si(111)7 x 7 due to short-range electrostatic interactions. Applied physics. A, Materials science & processing, Vol. 72, Suppl. 1 , S19-S22.

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Official URL: http://edoc.unibas.ch/dok/A5262142

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Abstract

Contrast inversion in nc-AFM on Si(111)7 x 7 is observed at positive sample bias. Corner holes appear as protrusions and adatoms as holes. The application of negative bias voltages causes drastic changes in the atomic constrast. Frequency shift vs distance curves show evidence of short-range, voltage-dependent forces. These observations indicate that short-range electrostatic forces are important for atomic-scale contrast in nc-AFM.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Meyer, Ernst
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:Springer-Verlag
ISSN:1432-0630
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:22 Mar 2012 14:27
Deposited On:22 Mar 2012 13:56

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