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Nonballistic spin-field-effect transistor

Schliemann, J. and Egues, J. C. and Loss, D.. (2003) Nonballistic spin-field-effect transistor. Physical review letters, Vol. 90, H. 14 , 146801, 4 S..

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Official URL: http://edoc.unibas.ch/dok/A5254701

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Abstract

We propose a spin-field-effect transistor based on spin-orbit coupling of both the Rashba and the Dresselhaus types. Different from earlier proposals, spin transport through our device is tolerant against spin-independent scattering processes. Hence the requirement of strictly ballistic transport can be relaxed. This follows from a unique interplay between the Dresselhaus and the Rashba coupling; these can be tuned to have equal strengths, leading to k-independent eigenspinors even in two dimensions. We discuss two-dimensional devices as well as quantum wires. In the latter, our setup presents strictly parabolic dispersions which avoids complications from anticrossings of different bands.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Theoretische Physik Mesoscopics (Loss)
UniBasel Contributors:Loss, Daniel
Item Type:Article, refereed
Article Subtype:Research Article
Bibsysno:Link to catalogue
Publisher:American Physical Society
ISSN:0031-9007
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:22 Mar 2012 14:26
Deposited On:22 Mar 2012 13:53

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