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Dopant imaging of power semiconductor device cross sections

Gysin, U. and Meyer, E. and Glatzel, Th and Guenzburger, G. and Rossmann, H. R. and Jung, T. A. and Reshanov, S. and Schoener, A. and Bartolf, H.. (2016) Dopant imaging of power semiconductor device cross sections. Microelectronic Engineering, 160. pp. 18-21.

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Official URL: http://edoc.unibas.ch/52661/

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Abstract

Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 10(14) cm(-3) to 10(19) cm(-3) on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The contact potential difference (CPD) shows under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed. (C) 2016 Elsevier B.V. All rights reserved.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Meyer, Ernst and Glatzel, Thilo and Jung, Thomas A.
Item Type:Article, refereed
Publisher:Elsevier
ISSN:0167-9317
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:15 Feb 2017 10:36
Deposited On:15 Feb 2017 10:36

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