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Surface doping in pentacene thin-film transistors with few monolayer thick channels

Haehlen, Tatjana and Vanoni, Claudio and Waeckerlin, Christian and Jung, Thomas A. and Tsujino, Soichiro. (2012) Surface doping in pentacene thin-film transistors with few monolayer thick channels. Applied physics letters, 101 (3). 033305.

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Official URL: http://edoc.unibas.ch/43510/

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Abstract

Molecular surface doping was studied for organic thin film transistors consisting of an active layer of few monolayers pentacene, as prepared by physical vapor deposition. In situ transport measurements with different dopants revealed both positive (tetrafluoro-tetracyanoquinodimethane - F(4)TCNQ) and negative (manganese(III)-tetraphenylporphyrin-chloride), as well as zero value (cobalt(II)-tetraphenylporphyrin and fullerene) gate threshold shifts. For F(4)TCNQ, a high doping efficiency of 25% was observed. The maximum gate threshold shift was more than halved with pentacene thickness increasing from 2.5 to 5 monolayers, indicating that the doping effect decays above similar to 2.5 monolayers. Charge transfer has been discussed based on complementary x-ray photoelectron experiments.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik
05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer)
UniBasel Contributors:Jung, Thomas A.
Item Type:Article, refereed
Publisher:American Institute of Physics
ISSN:0003-6951
Note:Publication type according to Uni Basel Research Database: Journal article
Identification Number:
Last Modified:04 Jul 2016 09:30
Deposited On:04 Jul 2016 09:30

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