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Graphene Transistors Are Insensitive to pH Changes in Solution

Fu, W. Y. and Nef, C. and Knopfrnacher, O. and Tarasov, A. and Weiss, M. and Calame, M. and Schonenberger, C.. (2011) Graphene Transistors Are Insensitive to pH Changes in Solution. Nano Letters, Vol. 11, H. 9. S. 3597-3600.

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Official URL: http://edoc.unibas.ch/dok/A6070298

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Abstract

We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Fu, Wangyang and Nef, Cornelia and Knopfmacher, Oren and Tarasov, Alexey and Weiss, Markus and Calame, Michel
Item Type:Article, refereed
Bibsysno:Link to catalogue
Publisher:American Chemical Society
ISSN:1530-6984
e-ISSN:1530-6992
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:13 Oct 2017 07:33
Deposited On:01 Mar 2013 11:06

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