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The Nernst limit in dual-gated Si nanowire FET sensors

Knopfmacher, O. and Tarasov, A. and Wangyang, Fu and Wipf, M. and Niesen, B. and Calame, M. and Schönenberger, C.. (2010) The Nernst limit in dual-gated Si nanowire FET sensors. Nano Letters, Vol. 10, H. 6. S. 2268-2274.

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Official URL: http://edoc.unibas.ch/dok/A5841637

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Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Nanoelektronik (Schönenberger)
UniBasel Contributors:Schönenberger, Christian and Knopfmacher, Oren and Tarasov, Alexey and Fu, Wangyang and Wipf, Mathias and Calame, Michel
Item Type:Article, refereed
Bibsysno:Link to catalogue
Publisher:American Chemical Society
ISSN:1530-6984
e-ISSN:1530-6992
Note:Publication type according to Uni Basel Research Database: Journal article
Last Modified:13 Oct 2017 07:32
Deposited On:14 Sep 2012 06:47

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